Thyristor-Diode Modules--SIRECTIFIER

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型号 TYPE	电气特性Electrical Characteristics										封装外形 Package Style	Datasheet
	IT			VDRM	ITSM	VTO	rT	dv/dt	TVJM	RthJC
	ITRMS	ITVM @TC		/VRRM	45°C/10ms	VTO	rT	dv/dt	TVJM	per chip
	A	A	°C	V	A	V	mΩ	V/μs	°C	K/W
STD25G08P	39	25	85	800	420	0.85	11	1000	125	1.68	GBJ(RS6M)	PDF
STD25G12P	39	25	85	1200	420	0.85	11	1000	125	1.68	GBJ(RS6M)	PDF
STD25G14P	39	25	85	1400	420	0.85	11	1000	125	1.68	GBJ(RS6M)	PDF
STD25G16P	39	25	85	1600	420	0.85	11	1000	125	1.68	GBJ(RS6M)	PDF
STD25G18P	39	25	85	1800	420	0.85	11	1000	125	1.68	GBJ(RS6M)	PDF
STD70GK08B	110	70	85	800	1600	0.85	3.7	1000	125	0.45	Fig. 36	PDF
STD70GK12B	110	70	85	1200	1600	0.85	3.7	1000	125	0.45	Fig. 36	PDF
STD70GK14B	110	70	85	1400	1600	0.85	3.7	1000	125	0.45	Fig. 36	PDF
STD70GK16B	110	70	85	1600	1600	0.85	3.7	1000	125	0.45	Fig. 36	PDF
STD70GK18B	110	70	85	1800	1600	0.85	3.7	1000	125	0.45	Fig. 36	PDF
STD90GK08B	141	90	85	800	1700	0.85	3.2	1000	125	0.3	Fig. 18	PDF
STD90GK12B	141	90	85	1200	1700	0.85	3.2	1000	125	0.3	Fig. 18	PDF
STD90GK14B	141	90	85	1400	1700	0.85	3.2	1000	125	0.3	Fig. 18	PDF
STD90GK16B	141	90	85	1600	1700	0.85	3.2	1000	125	0.3	Fig. 18	PDF
STD90GK18B	141	90	85	1800	1700	0.85	3.2	1000	125	0.3	Fig. 18	PDF
STD100GK08B	157	100	85	800	1700	0.85	3.2	1000	125	0.22	Fig. 18	PDF
STD100GK12B	157	100	85	1200	1700	0.85	3.2	1000	125	0.22	Fig. 18	PDF
STD100GK14B	157	100	85	1400	1700	0.85	3.2	1000	125	0.22	Fig. 18	PDF
STD100GK16B	157	100	85	1600	1700	0.85	3.2	1000	125	0.22	Fig. 18	PDF
STD100GK18B	157	100	85	1800	1700	0.85	3.2	1000	125	0.22	Fig. 18	PDF

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